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| BU2720AX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2720AX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH
825
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
VCE(sat) Collector-Emitter Saturation Voltage IC= 5.5A; IB= 1.38A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 5.5A; IB= 1.38A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125â
VEB= 7.5V; IC= 0
V
1.0
V
1.0
V
1.0
2.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
22
hFE-2
DC Current Gain
Switching times
tstg
Storage Time
tf
Fall Time
IC= 5.5A; VCE= 1V
4
IC= 5.5A, LC = 750μH;
Cfb = 15.5 nF; VCC = 125 V;
IB(end)= 1.2A; LB= 6μH; -VBB= 4V;
-IBM = ICM/2
7.5
8.5 μs
0.9 μs
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