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| BU2708AF Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2708AF
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH
825
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 1.33A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A; IB=B 1.33A
VCE= 1700V ; VBE= 0
VCE= 1700V ; VBE= 0; TC=125â
VEB= 6V ; IC= 0
1.0
V
1.0
V
1.0
2.0
mA
70 μA
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
21
hFE-2
DC Current Gain
IC= 4A ; VCE= 1V
3
7.3
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