 English |
|
|
|
|
|
|
|
| BU2527AX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2527AX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB=B 1.2A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125â
VEB= 7.5V; IC= 0
5.0
V
1.3
V
0.25
2.0
mA
0.25 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
6
21
hFE-2
DC Current Gain
COB
Output Capacitance
Switching times
tstg
Storage Time
tf
Fall Time
IC= 6A; VCE= 5V
IE= 0; VCB= 10V; ftest= 1MHz
5
9
145
pF
IC= 6A , IB(end)= 0.55A; LB= 0.6μH
-VBB= 2V; (-dIB/dt= 3.33A/μs)
2.0 μs
0.2 μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese