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| BU2525DX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2525DX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH
MIN TYP. MAX UNIT
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=B 1.6A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IC= 8A; IB=B 1.6A
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0;TC=125â
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
72
1.1
V
1.0
2.0
mA
218 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
11
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
5
7
9.5
VECF
C-E Diode Forward Voltage
IF= 8A
2.0
V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1MHz
145
pF
Switching times
tstg
Storage Time
tf
Fall Time
IC= 8A , IB(end)= 1.1A; LB= 2.5μH
-VBB= 4V; (-dIB/dt= 1.6A/μs)
4.0 μs
0.35 μs
isc Websiteï¼www.iscsemi.cn
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