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| BU2525DF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6 A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=8A ;IB=1.6 A
VCE=BVCES; VBE=0
Tj=125
VEB=6V; IC=0
hFE-1
DC current gain
IC=1.0A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
VF
Diode forward voltage
IF=8A
CC
Collector capacitance
IE=0, f=1MHz;VCB=10V
Product Specification
BU2525DF
MIN TYP. MAX UNIT
800
V
7.5 13.5
V
5.0
V
1.1
V
1.0
2.0
mA
72 110 218 mA
11
5
7
9.5
1.6 2.0
V
145
pF
2
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