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| BU2525A Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2525A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=8A; IB=1.6A
VCE=rated ;VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
CC
Collector capacitance
IE=0, VCB=10V;f=1MHz
MIN TYP. MAX UNIT
800
7.5 13.5
V
5.0
V
1.3
V
1.0
2.0
mA
1.0
mA
6
13
26
5
7
10
145
pF
2
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