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| BU2522DF Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2522DF
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA ;IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ;IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A ;IB= 1.2A
VCE= BVCES; VBE= 0
VCE= BVCES; VBE= 0;TC=125â
VEB= 7.5V; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 6A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 6A
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1MHz
MIN TYP. MAX UNIT
800
V
7.5 13.5
V
5.0
V
1.3
V
0.25
2.0
mA
100
300 mA
10
5
8
2.0
V
115
pF
isc Websiteï¼www.iscsemi.cn
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