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| BU2520AW Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2520AW
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=B 1.2A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB=B 1.2A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125â
VEB= 7.5V; IC= 0
5.0
V
1.1
V
1.0
2.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
13
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
5
9.5
COB
Output Capacitance
Switching times
IE= 0; VCB= 10V; ftest= 1MHz
115
pF
tstg
Storage Time
tf
Fall Time
IC= 6A , IB(end)= 1.0A;LC= 650μH;
LB= 5.3μH; Cfb= 19nF;
-VBB= 4V; (-dIB/dt= 0.8A/μs)
5.5 μs
0.5 μs
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