 English |
|
|
|
|
|
|
|
| BU2520AF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
VEBO
Emitter-base breakdown voltage
IB=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2 A
VBEsat Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=6A ;IB=1.2 A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
CC
Collector capacitance
IE=0; f=1MHz;VCB=10V
Product Specification
BU2520AF
MIN TYP. MAX UNIT
800
V
7.5
13.5
V
5.0
V
1.1
V
1.0
2.0
mA
1.0
mA
13
5
7
9.5
115
pF
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese