 English |
|
|
|
|
|
|
|
| BU2508AW Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2508AW
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0,L= 25mH
700
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.12A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 1.7A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125â
VEB= 7.5V; IC= 0
1.0
V
1.1
V
1.0
2.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
13
hFE-2
DC Current Gain
IC= 4.5A; VCE= 1V
4
7
COB
Output Capacitance
Switching times (16kHz line deflection circuit)
IE= 0; VCB= 10V; ftest= 1MHz
80
pF
tstg
Storage Time
tf
Fall Time
IC= 4.5A , IB(end)= 1.1A; LB= 6μH
-VBB= 4V; (-dIB/dt= 0.6A/μs)
6.0 μs
0.6 μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese