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| BU2506DX Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU2506DX
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH
700
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.79A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB=B 0.79A
VCE= 1500V ; VBE= 0
VCE= 1500V ; VBE= 0; TC=125â
VEB= 7.5V ; IC= 0
5.0
V
1.1
V
1.0
2.0
mA
136
mA
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 5V
12
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
3.8
7.5
VECF
C-E Diode Forward Voltage
IF= 3A
2.0
V
COB
Output Capacitance
Switching times
tstg
Storage Time
tf
Fall Time
IE= 0; VCB= 10V; ftest= 1MHz
47
pF
IC= 3A, IB(end)= 0.67A; CFB= 9.4nF
LC= 1.35mH; LB= 8μH; -VBB= 4V;
(-dIB/dt= 0.45A/μs)
6.0 μs
0.5 μs
isc Websiteï¼www.iscsemi.cn
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