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| BU208D Datasheet, PDF (2/2 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU208D
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
700
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 2A
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC= 125â
VEB= 5.0V; IC= 0
1.0
V
1.3
V
1.0
2.0
mA
300 mA
hFE
DC Current Gain
IC= 1A; VCE= 5V
8
fT
Current-GainâBandwidth Product
IC= 0.1A; VCE= 5V; ftest= 5MHz
VECF
C-E Diode Forward Voltage
IF= 4A
7
MHz
2
V
Switching Times( Inductive load)
ts
Storage Time
tf
Fall Time
IC= 4.5A; IB= 1.8A; LB= 3μH;
VCC= 140V, LC= 0.9mH
7
μs
0.55
μs
isc Websiteï¼www.iscsemi.cn
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