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| BU205 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – NPN SILICON POWER TRANSISTOR | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH
V(BR)EBO Emitter-base breakdown votage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A
VBEsat Base-emitter saturation voltage
IC=2 A;IB=1A
ICES
Collector cut-off current
VCE=1500V;VBE=0
hFE
DC current gain
IC=2A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
tf
Fall time
IC=0.1A ; VCE=15V
IC=2A ;IB=1A
LB=10 H
Product Specification
BU205
MIN TYP. MAX UNIT
700
V
5
V
5.0
V
1.5
V
1.0
mA
2
65
pF
7.5
MHz
0.75
s
2
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