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| BU1706A Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BU1706A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH
750
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 1.5A; IB= 0.3A
VCE= VCESM; VBE= 0
VCE= VCESM; VBE= 0; TC=125â
VEB= 12V; IC= 0
1.0
V
1.3
V
1.0
2.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 5mA; VCE= 10V
8
hFE-2
DC Current Gain
IC= 400mA; VCE= 3V
12
35
hFE-3
DC Current Gain
Switching Times Resistive Load
IC= 1.5A; VCE= 1V
5
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 1.5A; IB1= -IB2= 0.3A
1.5 μs
6.5 μs
1.0 μs
isc Websiteï¼www.iscsemi.cn
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