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| BFR540 Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
BFR540
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 8V; IE= 0
0.05 μA
hFE
DC Current Gain
IC= 40mA ; VCE= 8V
60
250
fT
Current-GainâBandwidth Product IC= 40mA ; VCE= 8V; f= 1GHz
9
GHz
COB
Output Capacitance
IE= 0 ; VCB= 8V; f= 1MHz
0.9
pF
Cre
Feedback Frequency
PG
Power Gain
IE= 0 ; VCB= 8V; f= 1MHz
IC= 40mA ; VCE= 8V; f= 900MHz
0.6
pF
14
dB
PG
Power Gain
︱S21e︱2 Insertion Power Gain
NF
Noise Figure
IC= 40mA ; VCE= 8V; f= 2GHz
IC= 40mA ; VCE= 8V; f= 900MHz
IC= 10mA ; VCE= 8V; f= 900MHz
7
dB
12
13
dB
1.3 1.8 dB
NF
Noise Figure
IC= 40mA ; VCE= 8V; f= 900MHz
1.9 2.4 dB
NF
Noise Figure
Vo
Output Voltage
IC= 10mA ; VCE= 8V; f= 2GHz
IC = 40 mA; VCE = 8 V;
ZL = ZS = 75 Ω
2.1
dB
550
mV
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