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| BDY92 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY92
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB=B 0.5A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff current
VCB=80V; IE=0
VCE=80V;VBE=-1.5V
VCE=80V;VBE=-1.5V;TC=150â
VEB=6V; IC=0
0.5
V
1.0
V
1.2
V
1.5
V
1.0 mA
1.0
3.0
mA
1.0 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
30
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
30
120
hFE-3
DC Current Gain
IC= 10A ; VCE= 5V
20
fT
Current-GainâBandwidth Product IC= 0.5 A;VCE= 5V;ftest = 5MHz
Switching Times
70
MHz
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 5A; IB1= -IB2= 0.5A,
VCC=30V
0.35 μs
1.3 μs
0.2 μs
isc Websiteï¼www.iscsemi.cn
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