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| BDY78 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY78
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB=B 1A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 0.5A; VCE= 4V
VCE= 90V; VBE= -1.5V
VCE= 90V; VBE= -1.5V, TC=150â
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 4V
hFE-2
DC Current Gain
IC= 3A; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.2A; VCE= 10V
MIN MAX UNIT
55
V
90
V
1.0
V
3.0
V
2.0
V
1.0
5.0
mA
1.0
mA
25
100
5
8
MHz
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