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| BDY56 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A
VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A
VBE
Base-emitter on voltage
ICEX
Collector cut-off current
ICEO
Collector cut-off current
IC=4 A; VCE=4V
VCE=150V; VBE=-1.5V
TC=150
VCE=60V; IB=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=4V
hFE-2
DC current gain
IC=10A ; VCE=4V
fT
Transition frequency
IC=10A ; VCE=4V
Product Specification
BDY56
MIN TYP. MAX UNIT
120
V
1.1
V
2.5
V
1.8
V
3.0
30
mA
0.5 mA
3.0 mA
20
70
10
10
MHz
2
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