BDY26C Datasheet, PDF (2/2 Pages) Seme LAB – HIGH CURRENT NPN SILICON TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDY26C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.25A
ICES
Collector Cutoff Current
VCE= 250V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 180V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 2A; VCE= 4V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 15V; f=10MHz
Switching Times
ton
Turn-On Time
IC= 5A; IB= 1A
toff
Turn-Off Time
IC= 5A; IB1= 1A; IB2= -0.5A
MIN TYP. MAX UNIT
180
V
300
V
0.6
V
1.2
V
1.0 mA
1.0 mA
1.0 mA
75
180
10
MHz
1
μs
6
μs
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