BDX78 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-0.2A; I_B=0
V_(BR)CBO Collector-base breakdown voltage
I_C=-1mA; I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-1mA; I_C=0
V_CEsat-1 Collector-emitter saturation voltage I_C=-3A; I_B=-0.3A
V_CEsat-2 Collector-emitter saturation voltage I_C=-6A; I_B=-0.6A
V_BEsat Base-emitter saturation voltage
I_C=-6A; I_B=-0.6A
V_BE
Base-emitter on voltage
I_C=-3A ; V_CE=-2V
I_CBO
Collector cut-off current
V_CB=-40V; I_E=0
I_CEO
Collector cut-off current
V_CE=-30V; I_B=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
f_T
Transition frequency
I_C=-0.3A ; V_CE=-3V
h_FE
DC current gain
I_C=-1A ; V_CE=-2V
Switching times
t_on
Turn-on time
t_off
Turn-off time
I_C=2A I_B1=-I_B2=0.2A
Product Specification
BDX78
MIN TYP. MAX UNIT
-80
V
-100
V
-5
V
-1.0
V
-1.5
V
-2.0
V
-1.5
V
-0.1
mA
-0.2
mA
-0.5
mA
7
MHz
30
1.0
s
2.0
s
2