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| BDX77F Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDX77F
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.2A ;IB=B 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ;IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ;IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB=B 0.6A
VBE(on) Base-Emitter On Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A ; VCE= 2V
VCE= 30V; IB=B 0
VCB= VCBO;IE= 0
VCB= 1/2VCBO;IE= 0; TJ= 150â
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 2A ; VCE= 2V
fT
Current-GainâBandwidth Product
Switching Times
IC= 0.3A ; VCE= 3V, ftest= 1.0MHz
ton
Turn-On Time
toff
Turn-Off Time
IC= 2A; IB1= -IB2= 0.2A
MIN MAX UNIT
80
V
100
V
5
V
1.0
V
1.5
V
2.0
V
1.5
V
0.2
mA
0.1
1.0
mA
0.5
mA
30
7.0
MHz
1
μs
4
μs
isc Websiteï¼www.iscsemi.cn
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