BDX65C Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX65/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX65
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDX65A
BDX65B
IC= 50mA ;IB=0
BDX65C
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 5A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= ¹/2VCEOmax; IB= 0
VCB= VCEOmax;IE= 0
VCB= ¹/2VCBOmax;IE= 0;TJ= 200℃
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 3V
hFE-2
DC Current Gain
IC= 5A ; VCE= 3V
hFE-3
DC Current Gain
IC= 10A ; VCE= 3V
fT
Current-Gain—Bandwidth Product
IC=5A ; VCE= 3V
Switching times
ton
Turn-on Time
toff
Turn-off Time
IC= 5A; IB1= -IB2= 20mA
MIN TYP. MAX UNIT
60
80
V
100
120
2
V
2.5
V
1.2
V
0.2 mA
0.4
3
mA
5
mA
1500
1000
1500
7
MHz
1
μs
6
μs
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