BDW94 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER DARLINGTONS

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW94
V_CEO(SUS)
Collector-emitter
sustaining voltage
BDW94A
BDW94B
I_C=-0.1A, I_B=0
BDW94C
V_CEsat-1 Collector-emitter saturation voltage I_C=-5A ,I_B=-20mA
V_CEsat-2
V_BEsat-1
V_BEsat-2
Collector-emitter saturation voltage I_C=-10A ,I_B=-0.1A
Base-emitter saturation voltage
I_C=-5A ,I_B=-20mA
Base-emitter saturation voltage
I_C=-10A ,I_B=-0.1A
BDW94
V_CB=-45V, I_E=0
I_CBO
Collector
cut-off current
BDW94A V_CB=-60V, I_E=0
BDW94B V_CB=-80V, I_E=0
I_CEO
Collector
cut-off current
BDW94C V_CB=-100V, I_E=0
BDW94
V_CE=-45V, I_B=0
BDW94A V_CE=-60V, I_B=0
BDW94B V_CE=-80V, I_B=0
BDW94C V_CE=-100V, I_B=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE-1
h_FE-2
h_FE-3
V_F-1
DC current gain
DC current gain
DC current gain
Forward diode voltage
I_C=-3A ; V_CE=-3V
I_C=-5A ; V_CE=-3V
I_C=-10A ; V_CE=-3V
I_F=-5A
V_F-2
Forward diode voltage
I_F=-10A
Product Specification
BDW94/A/B/C
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-2.0
V
-3.0
V
-2.5
V
-4.0
V
-0.1 mA
-1.0 mA
1000
750
100
-2.0 mA
20000
-2.0
V
-4.0
V
2