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| BDW52C Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VCEsat-2 Collector-emitter saturation voltage IC=-10A; IB=-2.5A
VBEsat Base-emitter saturation voltage
IC=-10A; IB=-2.5A
VBE
Base-emitter on voltage
IC=-5A ; VCE=-4V
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VCE=-50V; IB=0
VCB=-100V; IE=0
TC=150
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
hFE-2
DC current gain
IC=-10A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-4V
Product Specification
BDW52C
MIN TYP. MAX UNIT
-100
V
-1.0
V
-3.0
V
-2.5
V
-1.5
V
-1.0 mA
-0.5
-5.0
mA
-2.0 mA
20
150
5
3
MHz
2
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