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| BDW51C Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=0.5A
VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=2.5A
VBEsat Base-emitter saturation voltage
IC=10A; IB=2.5A
VBE
Base-emitter on voltage
IC=5A ; VCE=4V
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VCE=50V; IB=0
VCB=100V; IE=0
TC=150
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=4V
hFE-2
DC current gain
IC=10A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=4V
Product Specification
BDW51C
MIN TYP. MAX UNIT
100
V
1.0
V
3.0
V
2.5
V
1.5
V
1.0 mA
0.5
5.0
mA
2.0 mA
20
150
5
3
MHz
2
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