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| BDW47 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-30mA, IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-5A ,IB=-10mA
VCEsat-2 Collector-emitter saturation voltage IC=-10A ,IB=-50mA
VBE
Base-emitter on voltage
IC=-10A ; VCE=-4V
ICBO
Collector cut-off current
VCB=-100V, IE=0
ICEO
Collector cut-off current
VCE=-50V, IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-5A ; VCE=-4V
hFE-2
DC current gain
IC=-10A ; VCE=-4V
fT
Transition frequency
IC=-3A ; VCE=-3V;f=1MHz
COB
Output capacitance
IE=0 ; VCB=-10V;f=0.1MHz
Product Specification
BDW47
MIN TYP. MAX UNIT
-100
V
-2.0
V
-3.0
V
-3.0
V
-1.0 mA
-2.0 mA
-2.0 mA
1000
250
4.0
MHz
300
pF
2
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