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| BDW42 Datasheet, PDF (2/3 Pages) Motorola, Inc – Darlington Complementary Silicon Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=30mA, IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5A ,IB=10mA
VCEsat-2 Collector-emitter saturation voltage IC=10A ,IB=50mA
VBE
Base-emitter on voltage
IC=10A ; VCE=4V
ICBO
Collector cut-off current
VCB=100V, IE=0
ICEO
Collector cut-off current
VCE=50V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=4V
hFE-2
DC current gain
IC=10A ; VCE=4V
fT
Transition frequency
IC=3A ; VCE=3V;f=1MHz
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
Product Specification
BDW42
MIN TYP. MAX UNIT
100
V
2.0
V
3.0
V
3.0
V
1.0
mA
2.0
mA
2.0
mA
1000
250
4.0
MHz
200
pF
2
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