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| BDV92 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDV91/93/95
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDV92
-60
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDV94 IC= -100mA ;IB=0
-80
V
BDV96
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A
-1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A
-3.0
V
VBE(sat) Base -Emitter Saturation Voltage
IC= -4A; IB=B -0.4A
-1.6
V
VBE(on) Base-Emitter On Voltage
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -4A ; VCE= -4V
VCE= VCEOmax;IB= 0
VCB= VCBOmax;IE= 0
VCB= 1/2VCBOmax;IE= 0; TJ= 150â
VEB= -7V; IC=0
-1.6
V
-0.2 mA
-0.1
-1.0
mA
-0.1 mA
hFE-1
DC Current Gain
IC= -4A ; VCE= -4V
20
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
5
fT
Current-GainâBandwidth Product IC= -0.5A ;VCE= -10V
4
MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
tf
Fall Time
IC= -4A; IB1= -IB2= -0.4A;
VCC= -30V
0.3
μs
0.7
μs
0.3
μs
isc Websiteï¼www.iscsemi.cn
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