BDT61BF Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDT61BF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
VCB= 50V; IE= 0; TC= 150℃
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 3V
hFE-2
DC Current Gain
IC= 1.5A ; VCE= 3V
hFE-3
DC Current Gain
IC= 4A ; VCE= 3V
MIN TYP. MAX UNIT
100
V
2.5
V
2.5
V
0.2
mA
1.0
0.2
mA
5
mA
2000
750
1000
isc website：www.iscsemi.com
2 _{isc & iscsemi is registered trademark}