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| BDT29 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDT29/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT29
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDT29A
BDT29B
IC= 30mA; IB= 0
BDT29C
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.125A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 4V
ICES
Collector Cutoff Current
VCE= VCEOmax; VBE= 0
ICEO
Collector
Cutoff Current
BDT29/A
VCE= 30V; IB=B 0
BDT29B/C VCE= 60V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.2A ; VCE= 4V
hFE-2
DC Current Gain
IC= 1A ; VCE= 4V
fT
Current-GainâBandwidth Product IC= 0.2A ; VCE= 10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 1.0A; IB1= -IB2= 0.1A
MIN TYP. MAX UNIT
40
60
V
80
100
0.7
V
1.3
V
0.2 mA
0.1 mA
0.2 mA
40
15
75
3
MHz
0.3
μs
1.0
μs
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