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| BD943 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.2A
ICBO
Collector cut-off current
VCB=22V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=1V
fT
Transition frequency
IC=0.25A ; VCE=10V
Product Specification
BD943
MIN TYP. MAX UNIT
22
V
7
V
0.5
V
1.2
V
50 μA
50 μA
85
475
3
MHz
2
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