BD844_17 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD844
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=- 1A; IB= -100mA
VBE(on) Base-Emitter On Voltage
IC= -1.0A ; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
VCB=-30V; IE= 0; TC= 125℃
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -5mA ; VCE= -2V
hFE-2
DC Current Gain
IC= -150mA ; VCE= -2V
hFE-3
DC Current Gain
IC= -1A ; VCE=- 2V
fT
Current-Gain—Bandwidth Product
IC= -50mA ; VCE=- 5V
MIN TYP. MAX UNIT
-80
V
-0.8
V
-1.3
V
-0.1
uA
-10
-10
uA
25
40
250
25
50
MHz
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