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| BD750 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BD750/750A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD750
BD750A
IC= -100mA ; IB= 0
Collector-Emitter
VCE(sat) Saturation Voltage
BD750
IC= -7.5A; IB=B -0.75A
BD750A IC= -5A; IB=B -0.5A
VBE(sat)
Base-Emitter
Saturation Voltage
BD750
IC= -7.5A; IB=B -0.75A
BD750A IC= -5A; IB=B -0.5A
ICEV
Collector
Cutoff Current
BD750
BD750A
VCEV= -100V;VBE(off)= -1.5V
VCEV= -130V;VBE(off)= -1.5V
IEBO
Emitter Cutoff Current
VEB= -7V; IC=0
hFE
DC Current Gain
BD750
IC= -7.5A ; VCE= -2V
BD750A IC= -5A ; VCE= -2V
fT
Current-GainâBandwidth Product IC= -0.5A ;VCE= -10V; ftest= 1MHz
MIN TYP. MAX UNIT
-90
V
-120
-1.5
V
-1.0
-1.8
V
-1.8
-0.5
mA
-0.5
-1.0 mA
15
60
25
100
4
MHz
isc Websiteï¼www.iscsemi.cn
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