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| BD649 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BD649
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB=B 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB=B 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 50mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
VCB= 60V; IE= 0; TC= 150â
ICEO
Collector Cutoff Current
VCE= 50V; IB=B 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 3V
MIN TYP. MAX UNIT
100
V
2.0
V
2.5
V
3.0
V
2.5
V
0.2
mA
2.0
0.5
mA
5
mA
750
isc Websiteï¼www.iscsemi.cn
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