BD242 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD242/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD242
V_CEO(SUS)
Collector-emitter
sustaining voltage
BD242A
BD242B
I_C=30mA; I_B=0
BD242C
V_CEsat Collector-emitter saturation voltage
I_C=-3A;I_B=-0.6 A
V_BE
Base-emitter on voltage
I_C=-3A ; V_CE=-4V
BD242/A V_CE=-30V; I_B=0
I_CEO
Collector cut-off current
BD242B/C V_CE=-60V; I_B=0
BD242
V_CE=-45V; V_BE=0
BD242A V_CE=-60V; V_BE=0
I_CES
Collector cut-off current
BD242B V_CE=-80V; V_BE=0
BD242C V_CE=-100V; V_BE=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE-1
DC current gain
I_C=-1A ; V_CE=-4V
h_FE-2
DC current gain
I_C=-3A ; V_CE=-4V
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-1.2
V
-1.8
V
-0.3
mA
-0.2
mA
-1
mA
25
10
2