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9N40 Datasheet, PDF (2/2 Pages) Unisonic Technologies – 9A, 400V N-CHANNEL POWER MOSFET
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
9N40
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS=8.5A ;VGS= 0
VGS= 10V; ID=4.5A
VGS= ±20V;VDS= 0
VDS= 400V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=8.5A;
VDD=200V;
RL=25Ω
MIN TYPE MAX UNIT
400
V
2.0
4.0
V
1.7
V
0.75
Ω
±100 nA
1
µA
1340
490
pF
160
60
22
ns
140
32
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