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| 60N10 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching Speed | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
60N10
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IS=60A ;VGS= 0
VGS= 10V; ID=20A
VGS= ±30V;VDS= 0
VDS= 100V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=30A;
VDD=50V;
RL=50Ω
MIN TYPE MAX UNIT
100
V
2.0
4.0
V
2.5
V
0.03
Ω
±100 nA
10
µA
4800
395
pF
950
280
126
ns
210
630
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