60N06-18 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
INCHANGE Semiconductor
60N06-18
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VSD
Diode Forward On-Voltage
IS=60A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=30A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=60A;
VDD=30V;
RG=2.5Ω
MIN TYPE MAX UNIT
60
V
2.0
4.0
V
1.6
V
18
mΩ
±100 nA
1
µA
30
30
ns
30
50
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