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| 60N05 Datasheet, PDF (2/2 Pages) Unisonic Technologies – 60A, 50V N-CHANNEL POWER MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25â)
isc Product Specification
60N05
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IS=60A ;VGS= 0
VGS= 10V; ID=30A
VGS= ±30V;VDS= 0
VDS= 50V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
MIN TYPE MAX UNIT
50
V
2.0
4.0
V
2.5
V
0.02
Ω
±100 nA
250
µA
2900
500
pF
1500
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