60N05-16 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
INCHANGE Semiconductor
60N05-16
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=60A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=30A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
tr
Rise Time
td(on)
Turn-on Delay Time
VDS= 60V; VGS= 0
VGS=10V;ID=30A;
VDD=30V;RG=50Ω
MIN TYPE MAX UNIT
50
V
2.0
4.0
V
1.6
V
16
mΩ
±100 nA
250
µA
105
ns
520
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