4N90-220 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
isc Product Specification
4N90
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IF=4A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID=2A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 900V; VGS= 0
MIN TYPE MAX UNIT
900
V
3.0
5.0
V
1.4
V
4.2
Ω
±100 nA
10
µA
SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=450V,ID=4A
RG=25Ω
Tf
Fall Time
MIN
TYP
MAX UNIT
60
ns
110
ns
90
ns
80
ns
isc website：www.iscsemi.com
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