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| 45N20 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
45N20
·ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
CONDITIONS
VGS= 0; ID=250µA
VDS= VGE; ID=250µA
VGS= 10V; ID= 22.5A
VGS= ±30V;VDS= 0
VDS=200V; VGS= 0
MIN TYPE MAX UNIT
200
V
2.0
4.0
V
0.065 Ω
±100 nA
200
µA
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