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| 45N05 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Fast Switching | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
45N05
·ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
VDS= VGS; ID=1mA
IS= 22.5A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 22.5A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=40V; VGS= 0
Ciss
Input Capacitance
Crss
Reverse Transfer capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
MIN TYPE MAX UNIT
50
V
2.0
4.0
V
1.4
V
0.04
Ω
±100 nA
1
µA
3000
750 pF
1800
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