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| 3N80 Datasheet, PDF (2/2 Pages) Unisonic Technologies – 2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET | |||
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INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
3N80
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
800
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.0
4.5
V
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
IS= 3A ;VGS= 0
VGS= 10V; ID= 1.5A
VGS= ±20V;VDS= 0
VDS=800V; VGS= 0
1.5
V
7.0
Ω
±100 nA
200
µA
Ciss
Input Capacitance
Crss
Reverse Transfer capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
1200
80
pF
300
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=1.5A;
VDD=125V;
RL=50Ω
150
50
ns
100
200
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