3N80-220 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
3N80
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
800
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.0
4.5
V
VSD
Diode Forward On-voltage
IS= 3A ;VGS= 0
1.4
V
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 1.5A
VGS= ±30V;VDS= 0
4.5
Ω
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
1
µA
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=3A;
VDD=400V;
RL=25Ω
80
40
ns
75
100
·
isc website：www.iscsemi.com
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