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| 3N60 Datasheet, PDF (2/2 Pages) Unisonic Technologies – 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET | |||
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N60
·ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=1mA
IS= 3A ;VGS= 0
VGS= 10V; ID= 1.5A
VGS= ±20V;VDS= 0
VDS=600V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=1.5A;
VDD=25V;
RL=50Ω
MIN TYPE MAX UNIT
600
V
2.0
4.5
V
1.5
V
2.5
Ω
±100 nA
200
µA
1000
80
pF
300
100
50
ns
80
180
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