3DG13007 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DG13007
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4A
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 5A ;IB= 1A
TC= 100℃
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A ;IB= 2A
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A ;IB= 0.4A
IC= 5A ;IB= 1A
TC= 100℃
VCES= 700V; VBE(off)= 1.5V
TC= 125℃
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 2A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.5 A; VCE= 10V;
COB
Output Capacitance
IE= 0; VCB= 10V; ftest = 0.1MHz
Switching Times; Resistive Load
td
Storage Time
tr
Fall Time
ts
Storage Time
IC= 5A; VCC= 125V;
IB1= IB2= 1A; tp= 25μs;
Duty Cycle≤ 1%
tf
Fall Time
MIN TYP. MAX UNIT
400
V
1.0
V
2.0
3.0
V
3.0
V
1.2
V
1.6
1.5
V
0.1
1.0
mA
0.1 mA
8
40
5
30
4
MHz
80
pF
0.1 μs
1.5 μs
3.0 μs
0.7 μs
isc website：www.iscsemi.com
2 _{isc & iscsemi is registered trademark}