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| 3DD7B Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 100V(Min) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD7B
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 2mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.75A; IB= 0.38A
ICEO
Collector Cutoff Current
VCE= 30V; IB= 0
hFE
DC Current Gain
IC= 3.75A; VCE= 10V
100
V
5
V
150
V
1.2 V
1.0 mA
15
180
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