3DD15C Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
3DD15C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE_(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO
Collector Cutoff Current
VCE= 50V; IB=0
ICBO
Collector Cutoff Current
VCB= 50V; IE=0
hFE
DC Current Gain
IC= 2A; VCE= 10V
tf
Fall Time
IC= 3A; IB1= 0.2A, IB2= -0.3A,
MIN MAX UNIT
150
V
200
V
5
V
1.5
V
1.0 mA
0.5 mA
30 250
1.0 μs
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