3DA752 Datasheet, PDF (2/3 Pages) TRANSYS Electronics Limited – TO-251 Plastic-Encapsulated Transistors

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DA752
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA
V(BR)CBO Collector-Base Breakdown Voltage IC= 100uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V
MIN TYP. MAX UNIT
0.8
V
2.0
V
40
V
30
V
5
V
0.1 μA
0.1 μA
100
400
13
pF
120
MHz
 hFE Classifications
O
Y
G
100-200 160-320 200-400
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